2sD789 silicon npn epitaxial application low frequency power amplifier complementary pair with 2sb740 outline 3 2 1 1. emitter 2. collector 3. base to-92mod http://www..net/ datasheet pdf - http://www..net/
2sD789 2 absolute maximum ratings (ta = 25?) item symbol ratings unit collector to base voltage v cbo 100 v collector to emitter voltage v ceo 50 v emitter to base voltage v ebo 6v collector current i c 1a collector power dissipation p c 0.9 w junction temperature tj 150 c storage temperature tstg ?5 to +150 c electrical characteristics (ta = 25?) item symbol min typ max unit test conditions collector to base breakdown voltage v (br)cbo 100 v i c = 10 m a, i e = 0 collector to emitter breakdown voltage v (br)ceo 50 v i c = 1 ma, r be = emitter to base breakdown voltage v (br)ebo 6 vi e = 10 m a, i c = 0 collector cutoff current i cbo 1 m av cb = 80 v, i e = 0 emitter cutoff current i ebo 0.2 m av eb = 6 v, i c = 0 dc current transfer ratio h fe * 1 100 800 v ce = 2 v, i c = 0.1a collector to emitter saturation voltage v ce(sat) 0.3 v i c = 1 a, i b = 0.1 a gain bandwidth product f t 100 mhz v ce = 2 v, i c = 10 ma collector output capacitance cob 20 pf v cb = 10 v, i e = 0, f = 1mhz note: 1. the 2sD789 is grouped by h fe as follows. bcde 100 to 200 160 to 320 250 to 500 400 to 800 http://www..net/ datasheet pdf - http://www..net/
2sD789 3 150 100 50 ambient temperature ta ( c) 0 1.2 0.8 0.4 maximum collector dissipation curve collector power dissipation p c (w) 8 410 6 2 collector to emitter voltage v ce (v) 0 100 80 60 40 20 typical output characteristics collector current i c (ma) 0.35 0.3 0.25 0.2 0.15 0.1 0.05 ma i b = 0 0.4 1.6 0.8 2.0 1.2 collector to emitter voltage v ce (v) 0 2.0 1.6 1.2 0.8 0.4 typical output characteristics collector current i c (a) 10 5 ma 15 20 25 30 35 40 i b = 0 p c = 0.9 w 0 1.0 0.2 0.8 0.4 0.6 base to emitter voltage v be (v) 1,000 300 100 30 10 3 1 typical transfer characteristics collector current i c (ma) v ce = 2 v http://www..net/ datasheet pdf - http://www..net/
2sD789 4 10 100 1,000 30 300 3 1 collector current i c (ma) 10,000 3,000 1,000 300 100 30 10 dc current transfer ratio h fe dc current transfer ratio vs. collector current pulse v ce = 2 v 1,000 300 30 100 10 collector current i c (ma) 1.0 0.3 0.1 0.03 0.04 collector to emitter saturation voltage v ce(sat) (v) base to emitter saturation voltage v be(sat) (v) v be(sat) v ce(sat) saturation voltage vs. collector current pulse i c = 10 i b 300 30 3 100 10 1.0 0.3 collector to base voltage v cb (v) 300 100 30 10 3 1.0 0.3 collector output capacitance c ob (pf) collector output capacitance vs. collector to base voltage f = 1 mhz i e = 0 http://www..net/ datasheet pdf - http://www..net/
0.60 max 0.5 0.1 4.8 0.3 3.8 0.3 8.0 0.5 0.7 2.3 max 10.1 min 0.5 1.27 2.54 0.65 0.1 0.75 max hitachi code jedec eiaj weight (reference value) to-92 mod conforms 0.35 g unit: mm http://www..net/ datasheet pdf - http://www..net/
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